M in si semiconductor is doped with 1017 b atoms/cm", calculate the e & hole a0 concentration assume n,= 1.5 x x 101/cm 4 2 cm /v-sec 0.5 cm'/v-sec 1o n(1.5x 10

m in Si semiconductor is doped with 1017 B atoms/cm", Calculate the e & hole A0 concentration Assume n,= 1.5 x x 101/cm 4 2 Cm /v-sec 0.5 cm'/v-sec 1o n(1.5x 100)? n= p 1016 = 2.25 x 10/cm Electrical conductivity o = ne H+pe G pe = 0.5 x 1.6 x 10-19 x 1010 0.8x 103 Q1 cm1 = 0.08 Q-1 m-1 An intrinsic Si semiconductor is simultaneously doped with 1016 P atoms per cm and 107 Al atom per cm. Calculate e and hole concentrations? Ng 106 ol. N 10' Mixed semiconductor. It will behave like p-type N> N Majority carrier concentration p N N, = 9 x 101/cm3 Minority carrier concentration 2.25x 1020 n = = 2.5x 10/cm. p 9x 1016