The donor concentration in a sample of n-type silicon is increased by factor of 100. the shift in the position of the fermi level at 300k, assuming the sample t

The donor concentration in a sample of n-type silicon is increased by factor of 100. The shift in the position of the fermi level at 300K, assuming the sample to be non-degenerate is [At 300 K, k,T 25 meV] 41. (A) 111.15 meV (B) 115.15 meV (C) 11.15 meV (D) 1.15 meV