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Vikash Raj Shrivastava posted an Question
April 25, 2021 • 01:38 am 30 points
  • CSIR NET
  • Physical Sciences

The effective density of states at the conduction band edge of ge is 1.04x 1010 cm at room temperature (300 k). ge has an optical bandgap of 0.66ev. the intrins

The effective density of states at the conduction band edge of Ge is 1.04x 1010 cm at room temperature (300 K). Ge has an optical bandgap of 0.66eV. The intrinsic carrier concentration (in cm) in Ge at room temperature (300 K) is approximately (A) 38. (B) 3x 1013 3x 1010 (D) 6x 1016 (C) 3x 101 1Call Us 7665435300

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