(d) none ol uie duove staucnid uuu consider a n-type semiconductor whose e, = 0, e = 2.0 ev and ea = 1.98 ev. the correct statement among the following is: (a)

Due to this production of extra electron hole pairs the fermi level moves down towards the valance band.

little math is there

https://www.google.com/url?sa=t&source=web&rct=j&url=https://www.quora.com/What-is-the-effect-of-temperature-on-the-Fermi-level-of-N-type-and-P-type-semiconductors&ved=2ahUKEwi2g-H_xZTrAhWuzjgGHZyvBlAQFjAKegQICxAB&usg=AOvVaw0qoc7C9QRfaxeASK2qBkSJ&cshid=1597198864851

See this

explanation mam?

yes mam

https://www.google.com/url?sa=t&source=web&rct=j&url=https://www.quora.com/What-is-the-effect-of-temperature-on-the-Fermi-level-of-N-type-and-P-type-semiconductors&ved=2ahUKEwi2g-H_xZTrAhWuzjgGHZyvBlAQFjAKegQICxAB&usg=AOvVaw0qoc7C9QRfaxeASK2qBkSJ&cshid=1597198864851. Explanation

but sir option d is given correct

But for n type semiconductor the fermi level increases towards CB with increases in temperature

https://www.quora.com/What-is-the-effect-of-temperature-on-Fermi-level/answer/Keerthi-Priya-154?ch=10&share=a80eaab2&srid=XRpEY

check this shristy

https://youtu.be/1td--HDNyMk see this video also...Different different explanation but in this video explanation is good

Sorry,then option D is correct...Thanks for correcting me🙏

Main concept behind all these shifting is that where the probability of electron density is more,the fermi level shifts towards there...By mathematically you can also find the population at different bands using boltzmann distribution