Gtot o ute tfsiue ot ute p-1 junocuon ts i upio two ugoiau the band gap of an intrinsic semiconduçtor is e = 0.72 ev and m.* = 6m*. at 300k, the fermi

gTOT O uTE TFSIUE OT UTe p-1 JunoCuon TS I upio twO uGOIau The band gap of an intrinsic semiconduçtor is E = 0.72 eV and m.* = 6m*. At 300K, the Fermi level with respect to the edge of the valence band (in eV) at k = 1.38 x 10-23 JK-1 (upto three decimal places) 1020 m-3 1f tho electron drift