Subrat Asked a Question
September 9, 2020 7:55 pmpts 30 pts
Q4. Pure silicon at 300 K has equal electron and hole concentration of 2x10 m. It is doped by by indium to the extent one part in 10 silicon atom. If the density of silicon is 4x10m, then the electron concentration in the doped silicon is (a) 10 m (b) 10 m (c) 10 mn (d) 10
  • 1 Answer(s)
  • 0 Likes
  • 1 Comments
  • Shares
  • Somnath Best Answer
    Correct answer is D. See attached file for solution.
    • cropped2146593137884811354.jpg
    Likes(0) Reply(0)
Head Office :
MPA 44, 2nd floor, Rangbari main Road Mahaveer Nagar II, Kota (Raj.) - 324005

Branch Office (Jaipur):
Shyam Tower, Plot No. F2, 6th Floor Amrapali Circle,
Vaishali Nagar, Jaipur, Rajasthan 302021

Mail: info@eduncle.com
All Rights Reserved © Eduncle.com