Q4. pure silicon at 300 k has equal electron and hole concentration of 2x10 m. it is doped by by indium to the extent one part in 10 silicon atom. if the densit

Q4. Pure silicon at 300 K has equal electron and hole concentration of 2x10 m. It is doped by by indium to the extent one part in 10 silicon atom. If the density of silicon is 4x10m, then the electron concentration in the doped silicon is (a) 10 m (b) 10 m (c) 10 mn (d) 10