Subrat Asked a Question
September 13, 2020 3:40 pmpts 30 pts
Q4. Pure silicon at 300 K has equal electron and hole concentration of 2x10m It IS doped by by indium to the extent one part in 10 silicon atom. If the density of silicon is 4x10m, then the electron concentration in the doped silicon is (a) 10m (b) 10'm (c) 10m d100m3 Danch affica
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  • Jeevesh Best Answer
    please see the attachment for details.
    • cropped1767078528.jpg
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