The donor concentration in a sample of n-type si is increased by a factor of 100. the shift in the position of the fermi level at 300 k. (kt = 25 mev at 300 k)

The donor concentration in a sample of n-type Si is increased by a factor of 100. The shift in the position of the fermi level at 300 K. (KT = 25 meV at 300 K) (B) 150.05 MeV D) (A) 215.15 MeV (C) 105.15 MeV 115.15 MeV in Attached photos :- 2.303 where from come