Henna Asked a Question
February 12, 2021 9:31 pmpts 30 pts
Z00 K, 400 K, and 600 K f K, J0 K, and 60 K for (a) con, (b) gcrmaniun and (c) gallium arsenide. 6.2 Two silicon semiconductor materials have the same properties but different gap band energies: EgA= 1.12eV and EpB =1.25 eV. Determine their intrinsic concentrations ni and nig and the ratio niB/niA 6.3 If the maximum intrinsic concentration of silicon is ta ba lisas
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  • Mahak thankyou
    see attached
    • cropped1908892311006365833.jpg
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